PART |
Description |
Maker |
MN102H60G MN102HF60G MN102H60 MN102H60K MN102HF60 |
Microcomputer - 16bit - General Purpose Microcomputers/Controllers MN102H60G , MN102H60K
|
PANASONIC[Panasonic Semiconductor] http://
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MN102H74G MN102H74F MN102H74D |
Microcomputer - 16bit - General Purpose From old datasheet system LQFP100-P-1414(Pb Free)
|
Matsshita / Panasonic
|
M38037M6-122FP M38037M6-133FP M38037M6-154FP M3803 |
RAM size: 2048bytes single chip 8-bit CMOS microcomputer RAM size: 1536bytes single chip 8-bit CMOS microcomputer RAM size: 768bytes single chip 8-bit CMOS microcomputer SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 3803/04 Group: General Purpose, with Flash RAM size: 256bytes single chip 8-bit CMOS microcomputer RAM size: 640bytes single chip 8-bit CMOS microcomputer RAM size: 896bytes single chip 8-bit CMOS microcomputer RAM size: 512bytes single chip 8-bit CMOS microcomputer RAM size: 384bytes single chip 8-bit CMOS microcomputer RAM size: 1024bytes single chip 8-bit CMOS microcomputer RAM size: 3804bytes single chip 8-bit CMOS microcomputer RAM size: 192bytes single chip 8-bit CMOS microcomputer
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
2SB1732 |
Genera purpose amplification(−12V −1.5A)
|
ROHM
|
K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power 1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44 1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44 Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor] Hynix Semiconductor, Inc.
|
TMP68HC05C4 TMP68HC11A0 TMP68HC11A1 TMP68HC11A8 TM |
THE TMP68HC05C4 CMOS MICROCOMPUTER IS A MEMBER OF THE 68HC05 FAMILY OF LOW-COST SINGLE-CHIP MICROCOMPUTER
|
Toshiba Semiconductor
|
A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316A |
Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM
|
AMIC Technology
|
AK4564VQ AK4564 AKD4564 |
16bit Mic/Hp/Spk AMP & D-ALC/EQ 16BIT CODEC WITH BUILT-IN ALC AND MIC/HP/SPK-AMP
|
AKM Asahi Kasei Microsystems
|